High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO/SiN.

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO and plasma-enhanced chemical vapor deposited (PECVD) SiN thin films that show a record high quantum efficiency. We investigated PECVD SiN passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon-dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance.