Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells.

In this work, we study the thermal degradation of In-rich InGaN quantum wells (QWs) and propose explanation of its origin based on the diffusion of metal vacancies. The structural transformation of the InGaN QWs is initiated by the formation of small initial voids created due to agglomeration of metal vacancies diffusing from the layers beneath the QW. The presence of voids in the QW relaxes the mismatch stress in the vicinity of the void and drives In atoms to diffuse to the relaxed void surroundings.

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.

The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice.

Special Issue "Advances in Epitaxial Materials"-Editorial Preface.

In this Special Issue, we have 10 excellent papers on epitaxy. In this editorial preface, I will make comments on the following issues: (1) applications of the materials examined, (2) lattice mismatch, (3) epitaxial growth methods used, (4) characterization methods used, (5) material problems: solved and still to be solved. The "Advances in Epitaxial Materials" has a big advantage of having, in one issue, papers on different materials, but in every paper the reader should find interesting information on epitaxial growth and characterization.

Influence of Showerhead-Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth.

The distance between the showerhead and the sample surface (GAP) is one of the main growth parameters of the commonly used research reactor, Close Coupled Showerhead. We examine its influence on the growth rate of GaN layers deposited under various conditions (growth temperature, carrier gas, V/III ratio and growth pressure). Regardless of other growth parameters, increasing the GAP value leads to a reduction in the growth rate.

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored.

Visible light communications using a directly modulated 422 nm GaN laser diode.

Visible light communications using a Gallium-nitride (GaN) laser diode is reported. Devices, which are cased in TO packages, show modulation bandwidths of up to 1.4 GHz.