Band edge modulation for high-performance LL-SAW resonators on LiNbO/SiC by introducing an ultra-thin intermediate oxide layer.

With the exploding demand of rapid information transmission, high-frequency acoustic filtering devices are becoming an immediate need. Longitudinal leaky surface acoustic wave (LL-SAW) devices with unique advantages can be a promising platform. In this paper, we introduce a 100 nm intermediate oxide layer into the X-cut lithium niobate on silicon carbide (LiNbO/SiC) to improve the in-band performance of LL-SAW resonators.