Electrostatic Generation of Bulk Acoustic Waves and Electrical Parameters of Si-MEMS Resonators.

This paper proposes an analytical approach to model the generation of bulk acoustic waves in an electrostatically excited silicon MEMS structure, as well as its electromechanical response in terms of static and dynamic displacements, electromechanical coupling, and motional current. The analysis pertains to the single-port electrostatic drive of trapped-energy thickness-extensional (TE) modes in thin plates. Both asymmetric single-side and symmetric double-side electrostatic gap configurations are modeled.