Nanoscale Charge Density and Dynamics in Graphene Oxide.

Graphene oxide (GO) is widely used as a component in thin film optoelectronic device structures for practical reasons because its electronic and optical properties can be controlled. Progress critically depends on elucidating the nanoscale electronic structure of GO. However, direct experimental access is challenging because of its disordered and nonconductive character.

Current-driven production of vortex-antivortex pairs in planar Josephson junction arrays and phase cracks in long-range order.

Proliferation of topological defects like vortices and dislocations plays a key role in the physics of systems with long-range order, particularly, superconductivity and superfluidity in thin films, plasticity of solids, and melting of atomic monolayers. Topological defects are characterized by their topological charge reflecting fundamental symmetries and conservation laws of the system. Conservation of topological charge manifests itself in extreme stability of static topological defects because destruction of a single defect requires overcoming a huge energy barrier proportional to the system size.

Conducting polymers as electron glasses: surface charge domains and slow relaxation.

The surface potential of conducting polymers has been studied with scanning Kelvin probe microscopy. The results show that this technique can become an excellent tool to really 'see' interesting surface charge interaction effects at the nanoscale. The electron glass model, which assumes that charges are localized by the disorder and that interactions between them are relevant, is employed to understand the complex behavior of conducting polymers.

Explicit Local Integrals of Motion for the Many-Body Localized State.

Recently, it has been suggested that the many-body localized phase can be characterized by local integrals of motion. Here we introduce a Hilbert-space-preserving renormalization scheme that iteratively finds such integrals of motion exactly. Our method is based on the consecutive action of a similarity transformation using displacement operators.

Delocalization by disorder in layered systems.

Motivated by anomalously large conductivity anisotropy in layered materials, we propose a simple model of randomly spaced potential barriers (mimicking stacking faults) with isotropic impurities in between the barriers. We solve this model both numerically and analytically by utilizing an exact solution for the conductivity of a one-dimensional disordered system. In the absence of bulk disorder, electron motion in the out-of-plane direction is localized.