Plasmonic-organic hybrid electro/optic Mach-Zehnder modulators: from waveguide to multiphysics modal-FDTD modeling.

Plasmonic organic hybrid electro/optic modulators are among the most innovative light modulators fully compatible with the silicon photonics platform. In this context, modeling is instrumental to both computer-aided optimization and interpretation of experimental data. Due to the large computational resources required, modeling is usually limited to waveguide simulations.

Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors.

We present three-dimensional simulations of HgCdTe-based focal plane arrays (FPAs) with two-color and dual-band sequential infrared pixels having realistic truncated-pyramid shape, taking into account also the presence of compositionally graded transition layers. After a validation against the spectral responsivity of two-color, mid-wavelength infrared detectors from the literature, the method is employed for a simulation campaign on dual-band, mid-, and long-wavelength infrared FPAs illuminated by a Gaussian beam. Simulation results underscore the importance of a full-wave approach to the electromagnetic problem, since multiple internal reflections due to metallizations and slanted sidewalls produce non-negligible features in the quantum efficiency spectra, especially in the long-wavelength band.

Constraints and performance trade-offs in Auger-suppressed HgCdTe focal plane arrays.

Majority carrier depletion has been proposed as a method to suppress the dark current originating from quasi-neutral regions in HgCdTe infrared focal plane array detectors. However, a very low doping level is usually required for the absorber layer, a task quite difficult to achieve in realizations. In order to address this point, we performed combined electromagnetic and electric simulations of a planar $ 5 \times 5 $5×5 pixel miniarray with 5 µm wide square pixels, assessing the effect of the absorber thickness, its doping level in the interval $ {N_D}{ = [10^{14}}{,10^{15}}] \;{{\rm cm}^{ - 3}} $N=[10,10]cm, and temperature in the interval 140 K-230 K, both in the dark and under illumination.

Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities.

Lateral leakage of light has been identified as a detrimental loss source in many suggested and experimentally realized GaN-based VCSELs. In the present work we include thermal effects to realistically account for the substantial Joule heating in these devices. In contrast to what could be expected from the previous results, the induced thermal lensing does not make antiguided cavities more positively guided, so that they approach the unguided regime with extremely high lateral leakage.

Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications.

The GeSn alloy is a promising material for optoelectronic applications. It offers a tunable wavelength in the infrared (IR) spectrum and high compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, difficulties in growing device quality GeSn films has left the potentiality of this material unexplored.