Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors.

During the last decades, the Nonequilibrium Green's function (NEGF) formalism has been proposed to develop nano-scaled device-simulation tools since it is especially convenient to deal with open device systems on a quantum-mechanical base and allows the treatment of inelastic scattering. In particular, it is able to account for inelastic effects on the electronic and thermal current, originating from the interactions of electron-phonon and phonon-phonon, respectively. However, the treatment of inelastic mechanisms within the NEGF framework usually relies on a numerically expensive scheme, implementing the self-consistent Born approximation (SCBA).

Impact of Electron-Phonon Scattering on Optical Properties of CHNHPbI Hybrid Perovskite Material.

We numerically investigate the impact of electron-phonon scattering on the optical properties of a perovskite material (CHNHPbI). Using nonequilibrium Green function formalism, we calculate the local density of states for several values of the electron-phonon scattering strength. We report an Urbach-like penetration of the density of states in the band gap due to scattering.

Confinement effects and tunnelling through quantum dots.

Several recent theoretical advances concerning semiconductor quantum dots are reviewed. First of all, the effect of the quantum confinement on the energy gap is revisited on the basis of GW and Bethe-Salpeter calculations, showing that the excitonic gap is practically equal to the ordinary eigenvalue gap of single-particle approximations. The second part demonstrates that it is now possible to calculate the conductance peaks for the tunnelling current through a nanostructure.