Publications by authors named "Michael Telgenhoff"
Article Synopsis
- The study examines how physical properties of plasma-enhanced atomic layer deposition (PEALD) silicon nitride (SiN) films relate to their wet etch rate (WER), crucial for advanced semiconductor processing beyond 7 nm nodes.
- It investigates key factors such as hydrogen concentration, hydrogen bonding states, bulk film density, and residual impurities, using various analysis techniques to understand their influence on WER.
- Findings reveal linear and reciprocal relationships between hydrogen bonding concentration and WER, as well as bulk film density and WER, highlighting the impact of hydrogen bonding and chlorine impurities on etching mechanisms in hydrofluoric acid (HF).
In this work, a novel chlorodisilane precursor, pentachlorodisilane (PCDS, HSiCl), was investigated for the growth of silicon nitride (SiN ) via hollow cathode plasma-enhanced atomic layer deposition (PEALD). A well-defined self-limiting growth behavior was successfully demonstrated over the growth temperature range of 270-360 °C. At identical process conditions, PCDS not only demonstrated approximately >20% higher growth per cycle than that of a commercially available chlorodisilane precursor, hexachlorodisilane (SiCl), but also delivered a better or at least comparable film quality determined by characterizing the refractive index, wet etch rate, and density of the films.
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