Quantum Channel Extreme Bandgap AlGaN HEMT.

An extreme bandgap AlGaN quantum channel HEMT with AlGaN top and back barriers, grown by MOCVD on a bulk AlN substrate, demonstrated a critical breakdown field of 11.37 MV/cm-higher than the 9.8 MV/cm expected for the channel's AlGaN material.

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics.

High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures.

Revealing the complexity of ultra-soft hydrogel re-swelling inside the brain.

The brain is an ultra-soft viscoelastic matrix. Sub-kPa hydrogels match the brain's mechanical properties but are challenging to manipulate in an implantable format. We propose a simple fabrication and processing sequence, consisting of de-hydration, patterning, implantation, and re-hydration steps, to deliver brain-like hydrogel implants into the nervous tissue.

Multi-Segment TFT Compact Model for THz Applications.

We present an update of the Rensselaer Polytechnic Institute (RPI) thin-film transistor (TFT) compact model. The updated model implemented in Simulation Program with Integrated Circuit Emphasis (SPICE) accounts for the gate voltage-dependent channel layer thickness, enables the accurate description of the direct current (DC) characteristics, and uses channel segmentation to allow for terahertz (THz) frequency simulations. The model introduces two subthreshold ideality factors to describe the control of the gate voltage on the channel layer and its effect on the drain-to-source current and the channel capacitance.

Graphene-based plasmonic metamaterial for terahertz laser transistors.

This paper reviews recent advances in the research and development of graphene-based plasmonic metamaterials for terahertz (THz) laser transistors. The authors' theoretical discovery on THz laser transistors in 2007 was realized as a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) in 2018, demonstrating ∼0.1 µW single-mode emission at 5.

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications.

Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub-THz radiation. Such transistors (often referred to as TeraFETs) include short-channel silicon complementary metal oxide (CMOS).

Chip-Scale Droop-Free Fin Light-Emitting Diodes Using Facet-Selective Contacts.

Sub-micron-size light sources are currently extremely dim, achieving nanowatt output powers due to the current density and temperature droop. Recently, we reported a droop-free fin light-emitting diode (LED) pixel that at high current densities becomes a laser with record output power in the microwatt range. Here, we show a scalable method for selectively metallizing fins via their nonpolar side facet that allows electrical injection to sub-200 nm wide -ZnO fins on -GaN with at least 0.

Pandemic Equation for Describing and Predicting COVID19 Evolution.

The purpose of this work is to describe the dynamics of the COVID-19 pandemics accounting for the mitigation measures, for the introduction or removal of the quarantine, and for the effect of vaccination when and if introduced. The methods used include the derivation of the Pandemic Equation describing the mitigation measures via the evolution of the growth time constant in the Pandemic Equation resulting in an asymmetric pandemic curve with a steeper rise than a decrease and mitigation measures. The Pandemic Equation predicts how the quarantine removal and business opening lead to a spike in the pandemic curve.

Far-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS heterostructures.

We propose the far-infrared and terahertz emitting diodes (FIR-EDs and THz-EDs) based on the graphene-layer/black phosphorus (GL/b-P) and graphene-layer/MoS (GL/MoS) heterostructures with the lateral hole and vertical electron injection and develop their device models. In these EDs, the GL serves as an active region emitting the FIR and THz photons. Depending on the material of the electron injector, the carriers in the GL can be either cooled or heated dictated by the interplay of the vertical electron injection and optical phonon recombination.

Soft Printable Electrode Coating for Neural Interfaces.

The mechanical mismatch between implantable interfaces and neural tissues may be reduced by employing soft polymeric materials. Here, we report on a simple strategy to prepare and pattern a soft electrode coating of neural interfacing devices based on a screen-printable conducting hydrogel. The coating formulation, based on polyacrylamide and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, is suitable to additive manufacturing and exhibits excellent adhesion to polydimethylsiloxane, an elastomer commonly used as a substrate in soft neural interfaces.

Far-infrared photodetectors based on graphene/black-AsP heterostructures.

We develop the device models for the far-infrared interband photodetectors (IPs) with the graphene-layer (GL) sensitive elements and the black Phosphorus (b-P) or black-Arsenic (b-As) barrier layers (BLs). These far-infrared GL/BL-based IPs (GBIPs) can operate at the photon energies smaller than the energy gap, Δ, of the b-P or b-As or their compounds, namely, at ≲2 /3 corresponding to the wavelength range ≳(6-12) m. The GBIP operation spectrum can be shifted to the terahertz range by increasing the bias voltage.

Terahertz plasmonic detector controlled by phase asymmetry.

We demonstrate that a phase difference between terahertz signals coupled to the gate and source and gate and drain terminals of a field effect transistor (a TeraFET) induces a plasmon-assisted DC current, which is dramatically enhanced in the vicinity of plasmonic resonances. We describe a TeraFET operation with identical radiation amplitudes at the source and drain antennas but with a phase-shift-induced asymmetry. In this regime, the TeraFET operates as a tunable resonant polarization-sensitive plasmonic spectrometer, operating in the sub-terahertz and terahertz ranges of frequencies.

Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers.

We report on the device model for the infrared photodetectors based on the van der Waals (vdW) heterostructures with the radiation absorbing graphene layers (GLs). These devices rely on the electron interband photoexcitation from the valence band of the GLs to the continuum states in the conduction band of the inter-GL barrier layers. We calculate the photocurrent and the GL infrared photodetector (GLIP) responsivity at weak and strong intensities of the incident radiation and conclude that the GLIPs can surpass or compete with the existing infrared and terahertz photodetectors.

Low-Frequency Electronic Noise in Quasi-1D TaSe van der Waals Nanowires.

We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe capped with quasi-2D h-BN layers. Semimetallic TaSe is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe nanowires have lower levels of the normalized noise spectral density, S/I, compared to carbon nanotubes and graphene (I is the current).

Transition from capacitive coupling to direct charge transfer in asymmetric terahertz plasmonic assemblies.

We experimentally and numerically analyze the charge transfer THz plasmons using an asymmetric plasmonic assembly of metallic V-shaped blocks. The asymmetric design of the blocks allows for the excitation of classical dipolar and multipolar modes due to the capacitive coupling. Introducing a conductive microdisk between the blocks, we facilitated the excitation of the charge transfer plasmons and studied their characteristics along with the capacitive coupling by varying the size of the disk.

Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications.

We report on the current-carrying capacity of the nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that the TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA cm(-2)-an order-of-magnitude higher than that for copper.

New optical gating technique for detection of electric field waveforms with subpicosecond resolution.

The new optical gating technique uses a femtosecond optical laser pulses for the photoconductive detection of short pulses of terahertz (THz) radiation. This technique reproduces the shape of the THz pulse and after pulse plasmonic response of the two-dimensional electron gas in a short channel high electron mobility transistor (HEMT). The results are in excellent agreement with the electro-optic effect measurements and with the simulation results obtained in the frame of a two-dimensional hydrodynamic model.

Acoustoelectric effects in reflection of leaky-wave-radiated bulk acoustic waves from piezoelectric crystal-conductive liquid interface.

The leaky surface acoustic wave (SAW) propagating along X-axis of Y-cut lithium tantalate crystal strongly radiates energy in the form of an obliquely propagating narrow bulk acoustic wave (BAW) beam. The reflection of this beam from the crystal-liquid interface has been investigated. The test liquids were solutions of potassium nitrate in distilled water and of lithium chloride in isopropyl alcohol with the conductivity varied by changing the solution concentration.

Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content.

Carrier dynamics in high-Al-content AlGaN epilayers with different dislocation densities from 5 × 10(8) cm(-2) to 5 × 10(9) cm(-2) is studied by comparing the photoluminescence decay with the decay of carrier density. The carrier density decay was investigated using the light-induced transient grating technique. This comparison shows that the luminescence at the nonequilibrium carrier densities expected in operating light-emitting diodes depends on the recombination of free carriers and the localized exciton-like electron-hole pairs and localization-delocalization processes.

Artwork visualization using a solid-state lighting engine with controlled photochemical safety.

A concept of a solid-state lighting engine for artwork-specific illumination with controlled photochemical safety is introduced. The engine is based on a tetrachromatic cluster of colored light-emitting diodes wirelessly controlled via an external smart device. By using an instantaneous dimming functionality, the driving software allows for maintaining the damage irradiance relevant to a particular type of photosensitive artwork material at a constant value, while varying the chromaticity and color rendition properties of the generated light.

Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells.

The influence of carrier localization on photoluminescence efficiency droop and stimulated emission is studied in AlGaN multiple quantum wells with different strength of carrier localization. We observe that carrier delocalization at low temperatures predominantly enhances the nonradiative recombination and causes the droop, while the main effect of the delocalization at elevated temperatures is enhancement of PL efficiency due to increasing contribution of bimolecular recombination of free carriers. When the carrier thermal energy exceeds the dispersion of the potential fluctuations causing the carrier localization, the droop is caused by stimulated carrier recombination.

Double-graphene-layer terahertz laser: concept, characteristics, and comparison.

We propose and analyze the concept of injection terahertz (THz) lasers based on double-graphene-layer (double-GL) structures utilizing the resonant radiative transitions between GLs. We calculate main characteristics of such double-GL lasers and compare them with the characteristics of the GL lasers with intra-GL interband transitions. We demonstrate that the double-GL THz lasers under consideration can operate in a wide range of THz frequencies and might exhibit advantages associated with the reduced Drude absorption, weaker temperature dependence, voltage tuning of the spectrum, and favorable injection conditions.

Color rendition engineering of phosphor-converted light-emitting diodes.

We present an approach to the optimization of the trichromatic spectral power distributions (SPDs) of phosphor-converted (p-c) light-emitting diodes (LEDs) in respect of each of four different color rendition properties (high color fidelity, color saturating, color dulling, and color preference). The approach is based on selecting a model family of Eu phosphors and finding the optimal peak wavelengths of the phosphor bands as functions of the luminous efficacy of radiation. A blue component due to either phosphor photoluminescence or InGaN electroluminescence with the peak wavelength at about 460 nm was found to be an optimal one for the high-fidelity, color-dulling, and color-preference LEDs.

Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radiofrequency electric-field.

The evaluation of heat production from gold nanoparticles (AuNPs) irradiated with radiofrequency (RF) energy has been problematic due to Joule heating of their background ionic buffer suspensions. Insights into the physical heating mechanism of nanomaterials under RF excitations must be obtained if they are to have applications in fields such as nanoparticle-targeted hyperthermia for cancer therapy. By developing a purification protocol which allows for highly-stable and concentrated solutions of citrate-capped AuNPs to be suspended in high-resistivity water, we show herein, for the first time, that heat production is only evident for AuNPs of diameters ≤ 10 nm, indicating a unique size-dependent heating behavior not previously observed.