Insights into the Synthesis Mechanisms of Ag-CuP-GaP Multicomponent Nanoparticles.

Metal-semiconductor nanoparticle heterostructures are exciting materials for photocatalytic applications. Phase and facet engineering are critical for designing highly efficient catalysts. Therefore, understanding processes occurring during the nanostructure synthesis is crucial to gain control over properties such as the surface and interface facets' orientations, morphology, and crystal structure.

Electrical and Structural Properties of SiGe Nanowires Prepared from a Single-Source Precursor.

SiGe nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si-Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces the process parameters associated with the control of decomposition characteristics and the dosing of individual precursors. The group IV alloy NWs are single crystalline with a constant diameter along their axis.

Interface Dynamics in Ag-CuP Nanoparticle Heterostructures.

Earth-abundant transition metal phosphides are promising materials for energy-related applications. Specifically, copper(I) phosphide is such a material and shows excellent photocatalytic activity. Currently, there are substantial research efforts to synthesize well-defined metal-semiconductor nanoparticle heterostructures to enhance the photocatalytic performance by an efficient separation of charge carriers.

Epitaxial GeSn Nanowires for Nanoscale Mid-Infrared Emitters.

Highly oriented GeSn nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor-liquid-solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as a sole source of Sn for the formation of the metastable GeSn semiconductor material.

Solution-based low-temperature synthesis of germanium nanorods and nanowires.

Abstract: The Ga-assisted formation of Ge nanorods and nanowires in solution has been demonstrated and a catalytic activity of the Ga seeds was observed. The synthesis of anisotropic single-crystalline Ge nanostructures was achieved at temperatures as low as 170 °C. Gallium not only serves as nucleation seed but is also incorporated in the Ge nanowires in higher concentrations than its thermodynamic solubility limit.

Site-Specific Growth and in Situ Integration of Different Nanowire Material Networks on a Single Chip: Toward a Nanowire-Based Electronic Nose for Gas Detection.

A new method for the site-selective synthesis of nanowires has been developed to enable material growth with defined morphology and, at the same time, different composition on the same chip surface. The chemical vapor deposition approach for the growth of these nanowire-based resistive devices using micromembranes can be easily modified and represents a simple, adjustable fabrication process for the direct integration of nanowire meshes in multifunctional devices. This proof-of-concept study includes the deposition of SnO, WO, and Ge nanowires on the same chip.

Direct Synthesis of Hyperdoped Germanium Nanowires.

A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is demonstrated. The structural and chemical analysis reveals the homogeneous incorporation of ∼3.5 at.

Microwave-assisted solution-liquid-solid growth of Ge1-xSnx nanowires with high tin content.

A microwave assisted growth procedure for the first bottom-up synthesis of germanium tin alloy (Ge1-xSnx) nanowires with constant diameter along their axis was developed. Ge1-xSnx nanowires with mean diameters of 190 ± 30 nm and a homogeneous distribution of 12.4 ± 0.