We utilize a diffusion-controlled wet chemical etching technique to fabricate microstructures from two-dimensional HgTe/(Hg,Cd)Te-based topological insulators. For this purpose, we employ a KI: I: HBr: HO-based etchant. Investigation of the side profile of the etched heterostructure reveals that HgTe quantum wells protrude from the layer stack as a result of the different etch rates of the layers.
View Article and Find Full Text PDF© LitMetric 2025. All rights reserved.