Tuning network topology and vibrational mode localization to achieve ultralow thermal conductivity in amorphous chalcogenides.

Amorphous chalcogenide alloys are key materials for data storage and energy scavenging applications due to their large non-linearities in optical and electrical properties as well as low vibrational thermal conductivities. Here, we report on a mechanism to suppress the thermal transport in a representative amorphous chalcogenide system, silicon telluride (SiTe), by nearly an order of magnitude via systematically tailoring the cross-linking network among the atoms. As such, we experimentally demonstrate that in fully dense amorphous SiTe the thermal conductivity can be reduced to as low as 0.

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices.

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding PCM thermal properties at length scales close to the memory cell dimensions.

Template-Assisted Direct Growth of 1 Td/in(2) Bit Patterned Media.

We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer, which contains Pt pillars separated by amorphous metal oxide. The scheme enables the creation of both templated data and servo regions suitable for high density hard disk drive operation.

Tuning fulleride electronic structure and molecular ordering via variable layer index.

C60 fullerides are uniquely flexible molecular materials that exhibit a rich variety of behaviour, including superconductivity and magnetism in bulk compounds, novel electronic and orientational phases in thin films and quantum transport in a single-C60 transistor. The complexity of fulleride properties stems from the existence of many competing interactions, such as electron-electron correlations, electron-vibration coupling and intermolecular hopping. The exact role of each interaction is controversial owing to the difficulty of experimentally isolating the effects of a single interaction in the intricate fulleride materials.