Protected Josephson Rhombus chains.

We have studied the low-energy excitations in a minimalistic protected Josephson circuit which contains two basic elements (rhombi) characterized by the π periodicity of the Josephson energy. Novel design of these elements, which reduces their sensitivity to the offset charge fluctuations, has been employed. We have observed that the lifetime T1 of the first excited state of this quantum circuit in the protected regime is increased up to 70  μs, a factor of ∼100 longer than that in the unprotected state.

Ultrasensitive hot-electron nanobolometers for terahertz astrophysics.

The submillimetre or terahertz region of the electromagnetic spectrum contains approximately half of the total luminosity of the Universe and 98% of all the photons emitted since the Big Bang. This radiation is strongly absorbed in the Earth's atmosphere, so space-based terahertz telescopes are crucial for exploring the evolution of the Universe. Thermal emission from the primary mirrors in these telescopes can be reduced below the level of the cosmic background by active cooling, which expands the range of faint objects that can be observed.

Primary photoexcitations and the origin of the photocurrent in rubrene single crystals.

By simultaneously measuring the excitation spectra of transient luminescence and transient photoconductivity after picosecond pulsed excitation in rubrene single crystals, we show that free excitons are photoexcited starting at photon energies above 2.0 eV. We observe a competition between photoexcitation of free excitons and photoexcitation into vibronic states that subsequently decays into free carriers, while molecular excitons are instead formed predominantly through the free exciton.

Elastomeric transistor stamps: reversible probing of charge transport in organic crystals.

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.