High-Performance Oxide-Based p-n Heterojunctions Integrating p-SnO and n-InGaZnO.

The fabrication of oxide-based p-n heterojunctions that exhibit high rectification performance has been difficult to realize using standard manufacturing techniques that feature mild vacuum requirements, low thermal budget processing, and scalability. Critical bottlenecks in the fabrication of these heterojunctions include the narrow processing window of p-type oxides and the charge-blocking performance across the metallurgical junction required for achieving low reverse current and hence high rectification behavior. The overarching goal of the present study is to demonstrate a simple processing route to fabricate oxide-based p-n heterojunctions that demonstrate high on/off rectification behavior, a low saturation current, and a small turn-on voltage.

Binder-free printed PEDOT wearable sensors on everyday fabrics using oxidative chemical vapor deposition.

Polymeric sensors on fabrics have vast potential toward the development of versatile applications, particularly when the ready-made wearable or fabric can be directly coated. However, traditional coating approaches, such as solution-based methods, have limitations in achieving uniform and thin films because of the poor surface wettability of fabrics. Herein, to realize a uniform poly(3,4-ethylenedioxythiophene) (PEDOT) layer on various everyday fabrics, we use oxidative chemical vapor deposition (oCVD).