Local Enhancement of Dopant Diffusion from Polycrystalline Silicon Passivating Contacts.

Passivating contacts consisting of heavily doped polycrystalline silicon (poly-Si) and ultrathin interfacial silicon oxide (SiO) films enable the fabrication of high-efficiency Si solar cells. The electrical properties and working mechanism of such poly-Si passivating contacts depend on the distribution of dopants at their interface with the underlying Si substrate of solar cells. Therefore, this distribution, particularly in the vicinity of pinholes in the SiO film, is investigated in this work.