Large valley splitting induced by spin-orbit coupling effects in monolayer WNSCl.

Two-dimensional (2D) valley materials are promising materials for writing and storing information. The search for 2D materials with large valley splitting is essential for the development of spintronics and valley electronics. In this study, we theoretically design 2D WNSCl MXenes with large valley splitting based on first-principle calculations.

Theoretical prediction of valley spin splitting in two-dimensional Janus MSiGeZ (M = Cr and W; Z = N, P, and As).

With the exploration of valleytronic materials in MAZ structures, larger valley spin splitting has become a hot topic of research. Based on first-principles calculations, we predicted six valleytronic 2D (two-dimensional) Janus MSiGeZ (M = Cr and W; Z = N, P, and As) materials. The valley spin splitting value of WSiGeZ (Z = N, P, and As) can reach more than 400 meV, which is favorable for the practical application of valleytronics.

Prediction of a new two-dimensional valleytronic semiconductor MoGeP with large valley spin splitting.

Recently, MoSiN with large valley spin splitting was experimentally synthesized. However, materials with large valley spin splitting are still rare. We predict a new two-dimensional (2D) MoGeP material.