A headband for classifying human postures.

a real-time method using only accelerometer data is developed for classifying basic human static postures, namely sitting, standing, and lying, as well as dynamic transitions between them. The algorithm uses discrete wavelet transform (DWT) in combination with a fuzzy logic inference system (FIS). Data from a single three-axis accelerometer integrated into a wearable headband is transmitted wirelessly, collected and analyzed in real time on a laptop computer, to extract two sets of features for posture classification.

A high-voltage, high-current CMOS pulse generator ASIC for deep brain stimulation.

A high-voltage, high-current pulse generator ASIC based on 0.35-εm high-voltage CMOS technology is presented. The chip has eight independently-controlled biphasic output channels that can generate either current- or voltage-controlled pulses.

Electromechanical computing at 500 degrees C with silicon carbide.

Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300 degrees C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions.

3-D microfabricated electrodes for targeted deep brain stimulation.

This work presents a novel 4-sided, 16-channel deep brain stimulation electrode with a custom flexible high-density lead for connectivity with pulse generation electronics. The 3-dimensional electrode enables steering the current field circumferentially. The electrode is fabricated in pieces by micromachining and microfabrication techniques; the pieces are then assembled mechanically to form the electrode, after which the lead is connected.

Very thin poly-SiC films for micro/nano devices.

We report characterization of nitrogen-doped, very thin, low-stress polycrystalline silicon carbide (poly-SiC) films suitable for fabricating micro/nano devices. The poly-SiC films are deposited on 100 mm-diameter (100) silicon wafers in a large-scale, hot-wall, horizontal LPCVD furnace using SiH2Cl2 and C2H2 as precursors and NH, as doping gas. The deposition temperature and pressure are fixed at 900 degrees C and 4 Torr, respectively.