A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants.

This paper presents a fully integrated RF energy harvester (EH) with 30% end-to-end power harvesting efficiency (PHE) and supports high output voltage operation, up to 9.3V, with a 1.07 GHz input and under the electrode model for neural applications.

Analysis and Design Methodology of RF Energy Harvesting Rectifier Circuit for Ultra-Low Power Applications.

This paper reviews and analyses the design of popular radio frequency energy harvesting systems and proposes a method to qualitatively and quantitatively analyze their circuit architectures using new square-wave approximation method. This approach helps in simplifying design analysis. Using this analysis, we can establish no load output voltage characteristics, upper limit on rectifier efficiency, and maximum power characteristics of a rectifier.