Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.

High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s.

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors.

Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300 degrees C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphirebased SAW device is presented.