Publications by authors named "Md Mosarof Hossain Sarkar"
Article Synopsis
- Two-dimensional hexagonal boron nitride (h-BN) is a versatile material with applications in graphene devices, deep-ultraviolet emitters, and tunneling barriers, mainly due to its stability and wide-bandgap.
- High-quality, large-scale synthesis of h-BN is necessary for these applications, with chemical vapor deposition (CVD) on metal substrates being a primary method studied for its growth.
- The article reviews recent theoretical research on h-BN growth mechanisms, highlighting challenges faced on different metal substrates like Cu and Ni, and emphasizes the importance of advanced simulations for improving our understanding and optimizing growth techniques.
Chemical vapor deposition (CVD) through sulfidation of MoO is one of the most important synthesis techniques to obtain large-scale and high-quality two-dimensional (2D) MoS. Recently, HS precursor is being used in the CVD technique to synthesize 2D MoS. Although several studies have been carried out to examine the mechanism of MoS growth in the presence of sulfur and MoO precursors, the growth of MoS in the presence of HS precursor has largely remained unknown.
View Article and Find Full Text PDF