Comprehensive honey authentication in Bangladesh: Profiling physicochemical and bioactive compounds to distinguish floral sources and detect adulteration.

This study aims to advance honey authentication in Bangladesh by developing a reliable, cost-effective, and user-friendly system capable of distinguishing floral sources and purity. We analyzed various physicochemical parameters and bioactive compounds in honey samples from diverse floral sources across Bangladesh during different floral seasons, including deliberately adulterated samples. Results showed clear distinctions among the tested parameters.

Dataset explaining the comparative seasonal crop load and harvest quality of guava upon pruning strategies.

The dataset explained the details on how pruning techniques significantly affected the seasonal variations on fruit availability and edible quality of guava ( L.) under fluctuating sub-tropical weather conditions. The present pruning data also directed a way of enhancing lean season (off-season) harvest without sacrificing the main season yield and fruit quality.

Color, antioxidant and nutritional composition of dehydrated country bean () seeds using solar drying techniques and pretreatments in Bangladesh.

The country bean (), is a significant contributor of dietary protein and other essential components in human nutrition. Because of its elevated moisture content, it is susceptible to rapid decay, leading to losses after harvesting. The utilization of solar drying has attracted significant attention as a tactic to minimize nutrient depletion in dried goods and enhance their longevity.

Causal Effect Analysis of Demographic Concordance of Physician Trust and Respect in an Emergency Care Setting.

Objective: Patient perceptions of physician trust and respect are important factors for patient satisfaction evaluations. However, perceptions are subjective by nature and can be affected by patient and physician demographic characteristics. We aim to determine the causal effect on patient-physician demographic concordance and patient perceptions of physician trust and respect in an emergency care setting.

Characterization of Electrical Traps Formed in AlO under Various ALD Conditions.

Frequency dispersion in the accumulation region seen in multifrequency capacitance-voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamental property of oxides, their formation is expected to be affected to some extent by the parameters of oxide growth caused by atomic layer deposition (ALD). In this study, the effects of variation in two ALD conditions, deposition temperature and purge time, on the formation of near-interfacial oxide traps in the AlO dielectric are examined.

Border Trap Characterizations of AlO/ZrO and AlO/HfO Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress.

This study represents a comparison of the border trap behavior and reliability between HfO and ZrO films on -InGaAs with an AlO interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N:H mixed FGA passivates the border trap quite well, whereas N-based RTA performs better on interface traps. AlO/HfO showed more degradation in terms of the threshold voltage shift while AlO/ZrO showed higher leakage current behavior.

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/InGaAs on 300-mm Si Substrate.

This study presents a model to calculate the border trap density (N) of atomic layer deposition high-k onto InGaAs on a 300-mm (001) Si substrate. This model considers the quantum confinement effect and band nonparabolicity. Capacitance-equivalent thickness (CET) was used to reflect the distance of the charge centroid from the oxide-semiconductor interface.

Characterization of Al Incorporation into HfO Dielectric by Atomic Layer Deposition.

This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO film can stabilize the tetragonal phase of the HfO, which helps to achieve a higher dielectric constant () and lower leakage current density, as well as a higher breakdown voltage than HfO film on its own. Moreover, assimilation of AlO into HfO can reduce the hysteresis width and frequency dispersion.