This article reports the preparation of VO ink via a novel chemical route. The prepared VO ink has been spin coated for the synthesis of VO thin films on glass substrates. The synthesized VO thin films were annealed at 300-400 °C in air and characterized by different techniques.
View Article and Find Full Text PDFThis work provides a comprehensive investigation by using simulations and performance analysis of a high performance and narrowband AgCuS photodetector (PD) that operates in the near-infrared (NIR) region and is built using WS and BaSi semiconductors. Across its operational wavelength range, a comprehensive assessment of the device's electrical and optical properties such as photocurrent, open-circuit voltage, quantum efficiency, responsivity and detectivity is methodically carried out. Furthermore, a thorough investigation has been conducted into the impact of many parameters, including width, carrier density and defects of various layers.
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