Minimization of Energy Level Mismatch of PCBM and Surface Passivation for Highly Stable Sn-Based Perovskite Solar Cells by Doping n-Type Polymer.

Developing high-performance and stable Sn-based perovskite solar cells (PSCs) is difficult due to the inherent tendency of Sn oxidation and, the huge energy mismatch between perovskite and Phenyl-C61-butyric acid methyl ester (PCBM), a frequently employed electron transport layer (ETL). This study demonstrates that perovskite surface defects can be passivated and PCBM's electrical properties improved by doping n-type polymer N2200 into PCBM. The doping of PCBM with N2200 results in enhanced band alignment and improved electrical properties of PCBM.

Ce-Doped SnO Electron Transport Layer for Minimizing Open Circuit Voltage Loss in Lead Perovskite Solar Cells.

In the planar heterostructure of perovskite-based solar cells (PSCs), tin oxide (SnO) is a material that is often used as the electron transport layer (ETL). SnO ETL exhibits favorable optical and electrical properties in the PSC structures. Nevertheless, the open circuit voltage () depletion occurs in PSCs due to the defects arising from the high oxygen vacancy on the SnO surface and the deeper conduction band (CB) energy level of SnO.

Inhibition of Sn Oxidation in FASnI Perovskite Precursor Solution and Enhanced Stability of Perovskite Solar Cells by Reductive Additive.

Tin-based halide perovskite solar cells (Sn-PSCs) have attracted a progressive amount of attention as a potential alternative to lead-based PSCs (Pb-PSCs). Sn-perovskite films are fabricated by a solution process spin-coating technique. However, the efficiency of these devices varies significantly with the different batches of precursor solution due to the poor chemical stability of SnI-DMSO and the oxidation of Sn to Sn.