Improving the efficiency of a CIGS solar cell to above 31% with SbS as a new BSF: a numerical simulation approach by SCAPS-1D.

The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS/CIGS/SbS/Ni) is explored by utilizing the SCAPS-1D simulation software. Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage (-), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF.

High efficiency CuMnSnS thin film solar cells with SnS BSF and CdS ETL layers: A numerical simulation.

The quaternary compound copper manganese tin sulfide CuMnSnS is a potential absorber semiconductor material for fabricating thin film solar cells (TFSC) thanks to their promising optoelectronic parameters. This article numerically investigated the performance of CuMnSnS (CMTS)-based TFSC without and with tin sulphide (SnS) back surface field (BSF) thin-film layer. First, the impact of several major influential parameters such as the active material's thickness, doping concentration of photoactive materials, density of bulk and interface defect, working temperature, and metal contact, were studied systematically without a BSF layer.

Performance Enhancement of an MoS-Based Heterojunction Solar Cell with an InTe Back Surface Field: A Numerical Simulation Approach.

Researchers are currently showing interest in molybdenum disulfide (MoS)-based solar cells due to their remarkable semiconducting characteristics. The incompatibility of the band structures at the BSF/absorber and absorber/buffer interfaces, as well as carrier recombination at the rear and front metal contacts, prevents the expected result from being achieved. The main purpose of this work is to enhance the performance of the newly proposed Al/ITO/TiO/MoS/InTe/Ni solar cell and investigate the impacts of the InTe BSF and TiO buffer layer on the performance parameters of open-circuit voltage ( ), short-circuit current density ( ), fill factor (FF), and power conversion efficiency (PCE).

Concurrent investigation of antimony chalcogenide (SbSe and SbS)-based solar cells with a potential WS electron transport layer.

Antimony (Sb) chalcogenides such as antimony selenide (SbSe) and antimony sulfide (SbS) have distinct properties to be used as absorber semiconductors for harnessing solar energy including high absorption coefficient, tunable bandgap, low toxicity, phase stability. The potentiality of SbSe and SbS as absorber material in Al/FTO/SbSe(or SbS)/Au heterojunction solar cells (HJSCs) with 2D tungsten disulfide (WS) electron transport layer (ETL) layer has been investigated numerically using SCAPS-1D solar simulator. A systematic investigation of the impact of physical properties of each active material of SbSe, SbS and WS on photovoltaic parameters including layer thickness, carrier doping concentration, bulk defect density, interface defect density, carrier generation, and recombination.