Optimal architecture for ultralow noise graphene transistors at room temperature.

The fundamental origin of low-frequency noise in graphene field effect transistors (GFETs) has been widely explored but a generic engineering strategy towards low noise GFETs is lacking. Here, we systematically study and eliminate dominant sources of electrical noise to achieve ultralow noise GFETs. We find that in edge contacted, high-quality hexagonal boron nitride (hBN) encapsulated GFETs, the inclusion of a graphite bottom gate and long (⪆1.

Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene.

The combination of a field-tunable band gap, topological edge states, and valleys in the band structure makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in lng with the varying chemical potential, in strongly insulating bilayer graphene (BLG), decay nearly logarithmically for a channel length up to L/ξ≈20, where ξ is the localization length. This "marginal" self-averaging, and the corresponding dependence of ⟨lng⟩ on L, suggests that transport in strongly gapped BLG occurs along strictly one-dimensional channels, where ξ≈0.