Numerical evaluation and optimization of high sensitivity CuCdSnSe photodetector.

Copper cadmium tin selenide (CuCdSnSe) based photodetector (PD) has been explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide (CdS) and molybdenum disulfide (MoS) are used as a window and back surface field (BSF) layers, respectively. The physical attributes, such as width, carrier density and bulk defects have been adjusted to attain the optimal conditions.

Design and simulation of a high performance AgCuS jalpaite-based photodetector.

This work provides a comprehensive investigation by using simulations and performance analysis of a high performance and narrowband AgCuS photodetector (PD) that operates in the near-infrared (NIR) region and is built using WS and BaSi semiconductors. Across its operational wavelength range, a comprehensive assessment of the device's electrical and optical properties such as photocurrent, open-circuit voltage, quantum efficiency, responsivity and detectivity is methodically carried out. Furthermore, a thorough investigation has been conducted into the impact of many parameters, including width, carrier density and defects of various layers.