Se-Vacancy Healing with Substitutional Oxygen in WSe for High-Mobility p-Type Field-Effect Transistors.

Transition-metal dichalcogenides possess high carrier mobility and can be scaled to sub-nanometer dimensions, making them viable alternative to Si electronics. WSe is capable of hole and electron carrier transport, making it a key component in CMOS logic circuits. However, since the p-type electrical performance of the WSe-field effect transistor (FET) is still limited, various approaches are being investigated to circumvent this issue.

On MoS Thin-Film Transistor Design Consideration for a NO Gas Sensor.

MoS thin-film transistors (TFTs) are fabricated and simulated to explore the NO gas sensing mechanism depending on different device structures. In particular, the role of the AlO passivation layer on the MoS channel has been investigated. In the case of nonpassivated MoS TFTs, increase of off-current is observed with NO gas, which has been modeled with the modulation of the effective Schottky barrier height for holes because of the generation of in-gap states near the valence band as NO gases interact with the MoS channel.