Stabilizing Schottky-to-Ohmic Switching in HfO-Based Ferroelectric Films via Electrode Design.

The discovery of ferroelectric phases in HfO-based films has reignited interest in ferroelectrics and their application in resistive switching (RS) devices. This study investigates the pivotal role of electrodes in facilitating the Schottky-to-Ohmic transition (SOT) observed in devices consisting of ultrathin epitaxial ferroelectric HfYO (YHO) films deposited on LaSrMnO-buffered Nb-doped SrTiO (NbSTO|LSMO) with Ti|Au top electrodes. These findings indicate combined filamentary RS and ferroelectric switching occurs in devices with designed electrodes, having an ON/OFF ratio of over 100 during about 10 cycles.

Depth-Resolved X-Ray Photoelectron Spectroscopy Evidence of Intrinsic Polar States in HfO-Based Ferroelectrics.

The discovery of ferroelectricity in nanoscale hafnia-based oxide films has spurred interest in understanding their emergent properties. Investigation focuses on the size-dependent polarization behavior, which is sensitive to content and movement of oxygen vacancies. Though polarization switching and electrochemical reactions is shown to co-occur, their relationship remains unclear.