Transforming current complementary metal-oxide-semiconductor (CMOS) technology to fabricate memory chips and microprocessors into environmentally friendlier electronics requires the development of new approaches to resource- and energy-efficient electron transport and switching materials. Metal and multi-metal oxide layers play a key role in high-end technical applications. However, these layers are commonly produced through high-energy and high-temperature procedures.
View Article and Find Full Text PDFThe one-dimensional coordination polymer () [Sr(ib)(Hmda)] (Hib = isobutyric acid, CHO, and Hmda = -methyldi-ethano-lamine, CHNO), namely, -poly[[(-methyldi-ethano-lamine-κ ,,')strontium(II)]-di-μ-isobutyrato-κ ,':;κ :,'], was prepared by the one-pot aerobic reaction of [ZrO(OH)(ib)(HO)]·3Hib with Sr(NO) and Hmda in the presence of MnCl and EtN in aceto-nitrile. The use of MnCl is key to the isolation of as high-quality colorless crystals in good yield. The mol-ecular solid-state structure of was determined by single-crystal X-ray diffraction.
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