Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO ALD Properties for Improved Electrical and Reliability Parameters.

Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated chips. Towards achieving better electrical performance, there is a need for investigation into the influence of the variation in atomic layer deposition (ALD) parameters used for thin high-κ dielectric films (10 nm) made of AlO-doped ZrO. This variation should always be related to the structural uniformity, the electrical characteristics, and the electrical reliability of the capacitors.