A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction.

In recent years, experimental demonstration of ferroelectric tunnel junctions (FTJ) based on perovskite tunnel barriers has been reported. However, integrating these perovskite materials into conventional silicon memory technology remains challenging due to their lack of compatibility with the complementary metal oxide semiconductor process (CMOS). This communication reports the fabrication of an FTJ based on a CMOS-compatible tunnel barrier HfZrO (6 unit cells thick) on an equally CMOS-compatible TiN electrode.