Publications by authors named "Maxim N Khomyakov"

Silicon carbonitride films were deposited on Si (100), Ge (111), and fused silica substrates through the reactive magnetron sputtering of a SiC target in an argon-nitrogen mixture. The deposition was carried out at room temperature and 300 °C and at an RF target power of 50-150 W. An increase in the nitrogen flow rate leads to the formation of bonds between silicon and carbon atoms and nitrogen atoms and to the formation of SiCN layers.

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