On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology.

An overview is given of the many applications that nm-thin pure boron (PureB) layers can have when deposited on semiconductors such as Si, Ge, and GaN. The application that has been researched in most detail is the fabrication of nm-shallow -like Si diode junctions that are both electrically and chemically very robust. They are presently used commercially in photodiode detectors for extremeultraviolet (EUV) lithography and scanning-electron-microscopy (SEM) systems.

Modular microreactor with integrated reflection element for online reaction monitoring using infrared spectroscopy.

We report on the fabrication of an internal reflection element (IRE) combined with a modular polymer microfluidic chip that can be used for attenuated total reflection (ATR) infrared spectroscopy. The IRE is fabricated from a silicon wafer. Two different polymers are used for the fabrication of the two types of modular microfluidic chips, namely polydimethylsiloxane (PDMS) and cyclic olefin copolymer (COC).