Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity.

Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into photonic structures allows for enhanced brightness through the Purcell effect, supporting efficient quantum communication technologies. Our work focuses on InAs/InP QDs created via droplet epitaxy MOVPE to operate within the telecoms C-band.

Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer.

InAs quantum dots (QDs) are grown on an InGaAs interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a metal organic vapor phase epitaxy (MOVPE) reactor. Formation of metallic indium droplets on the InGaAs lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE.