We demonstrate the upgrade of a commercial confocal Raman microscope into a tip-enhanced Raman microscope/spectroscopy system (TERS) by integrating an interferometrically controlled atomic force microscope into the base of an existing upright microscope to provide near-field detection and thus signal enhancement. The feasibility of the system is demonstrated by measuring the Raman near-field enhancement on thin PEDOT:PSS films and on carbon nanotubes within a device geometry. An enhancement factor of 2-3 and of 5-6 is observed, respectively.
View Article and Find Full Text PDFThe large-scale integration of devices consisting of individual single-walled carbon nanotubes (SWCNT), all of the same chirality, is a critical step toward their electronic, optoelectronic, and electromechanical application. Here, the authors realize two related goals, the first of which is the fabrication of high-density, single-chirality SWCNT device arrays by dielectrophoretic assembly from monodisperse SWCNT solution obtained by polymer-mediated sorting. Such arrays are ideal for correlating measurements using various techniques across multiple identical devices, which is the second goal.
View Article and Find Full Text PDFOne of the biggest limitations of conventional carbon nanotube device fabrication techniques is the inability to scale up the processes to fabricate a large number of devices on a single chip. In this report, we demonstrate the directed and precise assembly of single-nanotube devices with an integration density of several million devices per square centimeter, using a novel aspect of nanotube dielectrophoresis. We show that the dielectrophoretic force fields change incisively as nanotubes assemble into the contact areas, leading to a reproducible directed assembly which is self-limiting in forming single-tube devices.
View Article and Find Full Text PDFWe show that the phonon coupling to the electronic system in individual metallic single-walled carbon nanotubes is not due to coupling to low-energy plasmons. The evidence stems from the measured Raman-Stokes G-mode, which for metallic and semiconducting tubes could be fitted well by the superposition of only two Lorentzian lines associated with vibrational modes along the nanotube axis and the nanotube circumference. In the case of metallic tubes the lower-energy G mode is significantly broadened, however maintaining the Lorentzian line shape, in contrast to the theoretically expected asymmetric Breit-Wigner-Fano line shape from phonon-plasmon coupling.
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