True Atomic-Scale Imaging in Three Dimensions: A Review of the Rebirth of Field-Ion Microscopy.

This article reviews recent advances utilizing field-ion microscopy (FIM) to extract atomic-scale three-dimensional images of materials. This capability is not new, as the first atomic-scale reconstructions of features utilizing FIM were demonstrated decades ago. The rise of atom probe tomography, and the application of this latter technique in place of FIM has unfortunately severely limited further FIM development.

Titanium Implant Failure After Chest Wall Osteosynthesis.

Background: Our objective was to assess potential contributing factors to implant failure (displacement or rupture) after titanium chest wall osteosynthesis.

Methods: We retrospectively reviewed the clinical data and preoperative and postoperative computed tomographic scans of patients undergoing chest wall osteosynthesis with titanium implants: the Stratos or the Matrix Fixation System in two European departments of thoracic surgery. The indications for titanium chest wall osteosynthesis, the type and number of implants, the topography of the reconstruction, surgical site infection, and role of associated flap and mesh were assessed.

3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography.

With the transition from planar to three-dimensional device architectures such as Fin field-effect-transistors (FinFETs), new metrology approaches are required to meet the needs of semiconductor technology. It is important to characterize the 3D-dopant distributions precisely as their extent, positioning relative to gate edges and absolute concentration determine the device performance in great detail. At present the atom probe has shown its ability to analyze dopant distributions in semiconductor and thin insulating materials with sub-nm 3D-resolution and good dopant sensitivity.

Atomic insight into Ge₁₋xSnx using atom probe tomography.

Ge(1-x)Sn(x) is receiving a growing interest in the scientific community, as it has important applications in opto-electronic devices, ( as stressor) Source/Drain materials for Ge and SiGe MOSFETS. It is predicted that at 10% Sn concentration or even lower, unstrained Ge(1-x)Sn(x) will exhibit a direct band gap. Moreover, in strained Ge(1-x)Sn(x) the expected concentration of Sn for this cross-over is even lower.