Charge Transport Limitations in Perovskite Solar Cells: The Effect of Charge Extraction Layers.

Understanding the charge transport characteristics and their limiting factors in organolead halide perovskites is of great importance for the development of competitive and economically advantageous photovoltaic systems derived from these materials. In the present work, we examine the charge carrier mobilities in CHNHPbI (MAPI) thin films obtained from a one-step synthesis procedure and in planar n-i-p devices based on these films. By performing time-of-flight measurements, we find mobilities around 6 cm/V s for electrons and holes in MAPI thin films, whereas in working solar cells, the respective effective mobility values are reduced by 3 orders of magnitude.

Control of Perovskite Crystal Growth by Methylammonium Lead Chloride Templating.

State-of-the-art solar cells based on methylammonium lead iodide (MAPbI3 ) now reach efficiencies over 20 %. This fast improvement was possible with intensive research in perovskite processing. In particular, chloride-based precursors are known to have a positive influence on the crystallization of the perovskite.

Graphene Near-Degenerate Four-Wave Mixing for Phase Characterization of Broadband Pulses in Ultrafast Microscopy.

We investigate near-degenerate four-wave mixing in graphene using femtosecond laser pulse shaping microscopy. Intense near-degenerate four-wave mixing signals on either side of the exciting laser spectrum are controlled by amplitude and phase shaping. Quantitative signal modeling for the input pulse parameters shows a spectrally flat phase response of the near-degenerate four-wave mixing due to the linear dispersion of the massless Dirac Fermions in graphene.

Microscopic view on the ultrafast photoluminescence from photoexcited graphene.

We present a joint theory-experiment study on ultrafast photoluminescence from photoexcited graphene. On the basis of a microscopic theory, we reveal two distinct mechanisms behind the occurring photoluminescence: besides the well-known incoherent contribution driven by nonequilibrium carrier occupations, we found a coherent part that spectrally shifts with the excitation energy. In our experiments, we demonstrate for the first time the predicted appearance and spectral shift of the coherent photoluminescence.

Extraction of photogenerated electrons and holes from a covalent organic framework integrated heterojunction.

Covalent organic frameworks (COFs) offer a strategy to position molecular semiconductors within a rigid network in a highly controlled and predictable manner. The π-stacked columns of layered two-dimensional COFs enable electronic interactions between the COF sheets, thereby providing a path for exciton and charge carrier migration. Frameworks comprising two electronically separated subunits can form highly defined interdigitated donor-acceptor heterojunctions, which can drive the photogeneration of free charge carriers.

Increasing crystallinity for improved electrical conductivity of TiO2 blocking layers.

In this Research Article, we present our results on the optimization of the TiO2 blocking layer to improve the efficiency of organic and hybrid solar cells and make them more competitive with standard silicon devices. The major aim of the present work is to increase the electrical conductivity within the TiO2 blocking layer to guarantee for efficient charge carrier transport and separation. This is realized by optimizing the calcination processes toward an increase in particle/domain size to increase the unpercolated pathways for charge carriers and to get deeper insight into the morphology of the sol-gel produced films.

Probing the momentum relaxation time of charge carriers in ultrathin layers with terahertz radiation.

We report on the development of a terahertz time-domain technique for measuring the momentum relaxation time of charge carriers in ultrathin semiconductor layers. Making use of the Drude model, our phase sensitive modulation technique directly provides the relaxation time. Time-resolved THz experiments were performed on n-doped GaAs and show precise agreement with data obtained by electrical characterization.