Enhancing economic multifunctionality without compromising multidiversity and ecosystem multifunctionality via forest enrichment.

Enriching tree species-poor and less productive forests by introducing economically valuable species is a strategy proposed for achieving multipurpose forest management. However, empirical evidence from managed and mature forests on the impact of this enrichment on ecological (multidiversity and ecosystem multifunctionality) and economic dimensions remains scarce, particularly when nonnative species are used. Here, we propose and test a framework that integrates economic multifunctionality, encompassing timber production-oriented goals and resistance against disturbances, with multidiversity and ecosystem multifunctionality in European beech forest stands enriched with conifers.

p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors.

The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device.

Severe and frequent extreme weather events undermine economic adaptation gains of tree-species diversification.

Forests and their provision of ecosystem services are endangered by climate change. Tree-species diversification has been identified as a key adaptation strategy to balance economic risks and returns in forest stands. Yet, whether this synergy between ecology and economics persists under large-scale extreme weather events remains unanswered.

Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain.

A graphene-based three-terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field-effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal-insulator gate structure to modulate the device currents.

Plasmonic 3D Self-Folding Architectures via Vacuum Microforming.

3D self-folding microarchitectures have been studied enormously since the past decade, because of the potential of utilizing the third dimension to reach a new level of device integration. However, incorporating various functionalities is a great challenge, due to the limited folding force and choice of materials. In particular, self-folding microarchitectures with advanced optical properties have yet to be demonstrated.

Influences on Plasmon Resonance Linewidth in Metal-Insulator-Metal Structures Obtained via Colloidal Self-Assembly.

Localized surface plasmon resonances (LSPRs) have been widely explored in various research fields because of their excellent ability to condense light into a nanometer scale volume. However, it suffers quite often from the broadening of the LSPR linewidths, resulting in low quality factors. Among the causes of the broadening, fabrication inaccuracies are crucial yet challenging to evaluate.

Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode.

Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies.

Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO substratum.

Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO and clarify the impact of the set-point temperature.

Atomic Layer Deposition for Coating of High Aspect Ratio TiO Nanotube Layers.

We present an optimized approach for the deposition of AlO (as a model secondary material) coating into high aspect ratio (≈180) anodic TiO nanotube layers using the atomic layer deposition (ALD) process. In order to study the influence of the diffusion of the AlO precursors on the resulting coating thickness, ALD processes with different exposure times (i.e.

Breakdown and Protection of ALD Moisture Barrier Thin Films.

The water vapor barrier properties of low-temperature atomic layer deposited (ALD) AlOx thin-films are observed to be unstable if exposed directly to high or even ambient relative humidities. Upon exposure to humid atmospheres, their apparent barrier breaks down and their water vapor transmission rates (WVTR), measured by electrical calcium tests, deteriorate by several orders of magnitude. These changes are accompanied by surface roughening beyond the original thickness, observed by atomic force microscopy.

[Evaluation of therapy outcome on a psychiatric admission ward. Background, methods and first results of a project on quality management].

Background: Quality management is an important management tool in modern health care systems. This applies also to the mental health care system, where in the past decade many concepts have been developed on how to implement quality management appropriately and successfully. However, for the German speaking countries there are only very few studies on the evaluation of therapy outcome in psychiatric inpatient populations available, furthermore they deal primarily with diagnostic subgroups.

New entries in Lewis acid-Lewis base bifunctional asymmetric catalyst: catalytic enantioselective Reissert reaction of pyridine derivatives.

The first catalytic enantioselective Reissert reaction of pyridine derivatives that affords products with excellent regio- and enantioselectivity is described. The key for success is the development of new Lewis acid-Lewis base bifunctional asymmetric catalysts containing an aluminum as a Lewis acid and sulfoxides or phosphine sulfides as a Lewis base. These reactions are useful for the synthesis of a variety of chiral piperidine subunits, and catalytic enantioselective formal synthesis of CP-293,019, a selective D4 receptor antagonist, was achieved.