Comparison of Ligand Architecture on Vapor Deposition Precursors: Synthesis, Characterization, and Reactivity of Volatile Cadmium Bis-Amidinate Complexes.

The lack of low-temperature (<200 °C) and easy-to-handle vapor deposition precursors for cadmium has been a limitation for cadmium chalcogenide ALD. Here, the cadmium amidinate system is presented as a scaffold for vapor deposition precursor design because the alkyl groups can be altered to change the properties of the precursor. Thus, the molecular structure affects the precursor stability at elevated temperature, onset of volatility, and reactivity.

Conformal Coating of a Phase Change Material on Ordered Plasmonic Nanorod Arrays for Broadband All-Optical Switching.

Actively tunable optical transmission through artificial metamaterials holds great promise for next-generation nanophotonic devices and metasurfaces. Plasmonic nanostructures and phase change materials have been extensively studied to this end due to their respective strong interactions with light and tunable dielectric constants under external stimuli. Seamlessly integrating plasmonic components with phase change materials, as demonstrated in the present work, can facilitate phase change by plasmonically enabled light confinement and meanwhile make use of the high sensitivity of plasmon resonances to the variation of dielectric constant associated with the phase change.

Oxygen-free atomic layer deposition of indium sulfide.

Atomic layer deposition (ALD) of indium sulfide (In2S3) films was achieved using a newly synthesized indium precursor and hydrogen sulfide. We obtain dense and adherent thin films free from halide and oxygen impurities. Self-limiting half-reactions are demonstrated at temperatures up to 225 °C, where oriented crystalline thin films are obtained without further annealing.