Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes.

Artificial photosynthesis relies on the availability of semiconductors that are chemically stable and can efficiently capture solar energy. Although metal oxide semiconductors have been investigated for their promise to resist oxidative attack, materials in this class can suffer from chemical and photochemical instability. Here we present a methodology for evaluating corrosion mechanisms and apply it to bismuth vanadate, a state-of-the-art photoanode.

Stable Solar-Driven Water Oxidation to O2(g) by Ni-Oxide-Coated Silicon Photoanodes.

Semiconductors with small band gaps (<2 eV) must be stabilized against corrosion or passivation in aqueous electrolytes before such materials can be used as photoelectrodes to directly produce fuels from sunlight. In addition, incorporation of electrocatalysts on the surface of photoelectrodes is required for efficient oxidation of H2O to O2(g) and reduction of H2O or H2O and CO2 to fuels. We report herein the stabilization of np(+)-Si(100) and n-Si(111) photoanodes for over 1200 h of continuous light-driven evolution of O2(g) in 1.

Amorphous TiO₂ coatings stabilize Si, GaAs, and GaP photoanodes for efficient water oxidation.

Although semiconductors such as silicon (Si), gallium arsenide (GaAs), and gallium phosphide (GaP) have band gaps that make them efficient photoanodes for solar fuel production, these materials are unstable in aqueous media. We show that TiO2 coatings (4 to 143 nanometers thick) grown by atomic layer deposition prevent corrosion, have electronic defects that promote hole conduction, and are sufficiently transparent to reach the light-limited performance of protected semiconductors. In conjunction with a thin layer or islands of Ni oxide electrocatalysts, Si photoanodes exhibited continuous oxidation of 1.