Roughness Suppression in Electrochemical Nanoimprinting of Si for Applications in Silicon Photonics.

Metal-assisted electrochemical nanoimprinting (Mac-Imprint) scales the fabrication of micro- and nanoscale 3D freeform geometries in silicon and holds the promise to enable novel chip-scale optics operating at the near-infrared spectrum. However, Mac-Imprint of silicon concomitantly generates mesoscale roughness (e.g.

Ultralow 0.034 dB/m loss wafer-scale integrated photonics realizing 720 million Q and 380 μW threshold Brillouin lasing.

We demonstrate 0.034 dB/m loss waveguides in a 200-mm wafer-scale, silicon nitride (SiN) CMOS-foundry-compatible integration platform. We fabricate resonators that measure up to a 720 million intrinsic Q resonator at 1615 nm wavelength with a 258 kHz intrinsic linewidth.

Broadband, ultrahigh efficiency fiber-to-chip coupling via multilayer nanophotonics.

We design, fabricate, and characterize a multilayer nanophotonic structure that couples light from standard optical fiber to an integrated photonics chip with unprecedented efficiency. The structure comprises a multilayer waveguide array tapering into a single waveguide supporting only fundamental TE- and TM-like modes. Measurements reveal a record-setting fiber-to-chip coupling efficiency of ${98.

422 Million intrinsic quality factor planar integrated all-waveguide resonator with sub-MHz linewidth.

High quality-factor (Q) optical resonators are a key component for ultra-narrow linewidth lasers, frequency stabilization, precision spectroscopy and quantum applications. Integration in a photonic waveguide platform is key to reducing cost, size, power and sensitivity to environmental disturbances. However, to date, the Q of all-waveguide resonators has been relegated to below 260 Million.

Electronic Metamaterials with Tunable Second-order Optical Nonlinearities.

The ability to engineer metamaterials with tunable nonlinear optical properties is crucial for nonlinear optics. Traditionally, metals have been employed to enhance nonlinear optical interactions through field localization. Here, inspired by the electronic properties of materials, we introduce and demonstrate experimentally an asymmetric metal-semiconductor-metal (MSM) metamaterial that exhibits a large and electronically tunable effective second-order optical susceptibility (χ).

Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities.

We present experimental results on the observation of a bulk second-order nonlinear susceptibility, derived from both free-space and integrated measurements, in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely χ = 0.14 ± 0.

Effect of dielectric claddings on the electro-optic behavior of silicon waveguides.

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide and, by measuring their electro-optic behavior, we characterize the capacitively induced free-carrier effect. By comparing our results with simulations, we confirm that the observed voltage dependences of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguides and show how strongly these effects depend on the cladding material that comes into contact with the waveguide. Waveguide loss is additionally found to have a high sensitivity to the applied voltage, suggesting that these effects may find use in applications that require low- or high-loss propagation.

Silicon nanoridge array waveguides for nonlinear and sensing applications.

We fabricate and characterize waveguides composed of closely spaced and longitudinally oriented silicon ridges etched into silicon-on-insulator wafers. Through both guided mode and bulk measurements, we demonstrate that the patterning of silicon waveguides on such a deeply subwavelength scale is desirable for nonlinear and sensing applications alike. The proposed waveguide geometry simultaneously exhibits comparable propagation losses to similar schemes proposed in literature, an enhanced effective third-order nonlinear susceptibility, and high sensitivity to perturbations in its environment.

Multichannel Bragg gratings in silicon waveguides with asymmetric sidewall modulation.

We demonstrate a new type of on-chip Bragg grating designed to possess multiple stopbands at predetermined wavelengths. By employing sidewall modulation to control the full width half-maximum and extinction ratio, and through the incorporation of multiple spatial frequencies into the gratings' periodicities, we show that Bragg reflection can be achieved at particular wavelengths of interest without compromising spectrally distinct characteristics. Multiple device geometries are theoretically studied using the finite-difference time-domain method, and the results these analyses yield are shown to be in good agreement with experimental data.

Tensor of the second-order nonlinear susceptibility in asymmetrically strained silicon waveguides: analysis and experimental validation.

We theoretically consider the existence of multiple nonzero components of the second-order nonlinear susceptibility tensor, χ(2), generated via strain-induced symmetry breaking in crystalline silicon. We determine that, in addition to the previously reported χ(xxy)(2) component, the χ(yyy)(2) component also becomes nonzero based on the remaining symmetry present in the strained material. In order to characterize these two nonlinearities, we fabricate Fabry-Perot waveguide resonators on 250 nm thick silicon-on-insulator wafers clad with 180 nm of compressively stressed (-1.

Invariance of optimal composite waveguide geometries with respect to permittivity of the metal cladding.

We optimize the threshold gain for cylindrical composite (semiconductor-dielectric-metal) waveguides (WGs) with various metal claddings. We show that the optimal dielectric width is invariant with respect to the imaginary part of the permittivity of the metal, εM'', and weakly dependent on the real part, εM'. To explain this behavior, we compare optimal geometries of WGs with different semiconductor permittivities, εG'.