The dispositional need for cognitive closure indirectly predicts mock jurors' sentencing decisions through right-wing authoritarianism.

One reason people are motivated to hold right-wing authoritarian beliefs is the need to manage uncertainty. Right-wing authoritarianism provides a stable source of black-and-white 'answers' about the social world - obey established authorities and norms and show hostility to deviants. Right-wing authoritarianism, in turn, is positively associated with more punitive attitudes and judgements.

Trade-off between Gradual Set and On/Off Ratio in HfO-Based Analog Memory with a Thin SiO Barrier Layer.

HfO-based synapses are widely accepted as a viable candidate for both in-memory and neuromorphic computing. Resistance change in oxide-based synapses is caused by the motion of oxygen vacancies. HfO-based synapses typically demonstrate an abrupt nonlinear resistance change under positive bias application (set), limiting their viability as analog memory.

Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides.

Heterostructures of two-dimensional transition metal dichalcogenides (TMDs) can offer a plethora of opportunities in condensed matter physics, materials science, and device engineering. However, despite state-of-the-art demonstrations, most current methods lack enough degrees of freedom for the synthesis of heterostructures with engineerable properties. Here, we demonstrate that combining a postgrowth chalcogen-swapping procedure with the standard lithography enables the realization of lateral TMD heterostructures with controllable dimensions and spatial profiles in predefined locations on a substrate.

Impact of Synthesized MoS Wafer-Scale Quality on Fermi Level Pinning in Vertical Schottky-Barrier Heterostructures.

Transition metal dichalcogenide (TMD)-based vertical Schottky heterostructures have recently shown promise as a next generation device for a variety of applications. In order for these devices to operate effectively, the interface between the TMD and metal contacts must be well-understood and optimized. In this work, the interface between synthesized MoS and gold or platinum metal contacts is explored as a function of MoS film quality to understand Fermi level pinning effects.