Encoding multistate charge order and chirality in endotaxial heterostructures.

High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1T-TaS due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS devices. Here, we demonstrate the fabrication of nanothick verti-lateral H-TaS/1T-TaS heterostructures in which the number of endotaxial metallic H-TaS monolayers dictates the number of resistance transitions in 1T-TaS lamellae near room temperature.

Near Room-Temperature Intrinsic Exchange Bias in an Fe Intercalated ZrSe Spin Glass.

Some magnetic systems display a shift in the center of their magnetic hysteresis loop away from zero field, a phenomenon termed exchange bias. Despite the extensive use of the exchange bias effect, particularly in magnetic multilayers, for the design of spin-based memory/electronics devices, a comprehensive mechanistic understanding of this effect remains a longstanding problem. Recent work has shown that disorder-induced spin frustration might play a key role in exchange bias, suggesting new materials design approaches for spin-based electronic devices that harness this effect.

Bridging Structure, Magnetism, and Disorder in Iron-Intercalated Niobium Diselenide, FeNbSe, below = 0.25.

Transition-metal dichalcogenides (TMDs) intercalated with magnetic ions serve as a promising materials platform for developing next-generation, spin-based electronic technologies. In these materials, one can access a rich magnetic phase space depending on the choice of intercalant, host lattice, and relative stoichiometry. The distribution of these intercalant ions across given crystals, however, is less well defined-particularly away from ideal packing stoichiometries-and a convenient probe to assess potential longer-range ordering of intercalants is lacking.