Publications by authors named "Matthew N Sysak"

We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap for modulation.

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We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors.

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In this work we present both experimental and theoretical thermal analysis of an electrically pumped hybrid silicon evanescent laser. Measurements of an 850 mum long Fabry-Perot structure show an overall characteristic temperature of 51 oC, an above threshold characteristic temperature of 100 oC, and a thermal impedance of 41.8 oC/W.

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We report the first 1310 nm hybrid laser on a silicon substrate. This laser operates continuous wave (C.W.

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We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.

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Detailed wavelength conversion, extinction ratio regeneration, and signal re-amplification experiments are performed using a monolithically integrated, widely tunable photocurrent driven wavelength converter. A -3.5 dB power penalty is observed in bit error rate measurements at 2.

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