The Roger, 1861 (Formicidae, Ponerinae) of Hong Kong SAR with additional records from Guangdong, China.

is the most diverse genus of the ant subfamily Ponerinae and is widely distributed across the world's tropical and subtropical regions. More than 40 species are known from the Oriental realm displaying a wide range of ecologies, although their life history traits remain poorly understood, and new species are frequently discovered. Here, a faunal review of the genus from Hong Kong SAR, southern China is provided.

Tunnel junctions based on interfacial two dimensional ferroelectrics.

Van der Waals heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral bilayers of transition metal dichalcogenides. Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements.

Strumigenys emmae (Emery, 1890) (Myrmicinae) new to Britain, with an updated key to the known Strumigenys of the West Palaearctic.

The ant genus Strumigenys is a hyper diverse pantropical group of specialised predatory leaf litter dwelling ants. Species richness peaks within tropics, with few species extending into the West Palaearctic realm. A significant proportion of Strumigenys species known from the West Palaearctic are non-native, spread via human commerce, and predominately establishing populations within artificially heated greenhouses.

A checklist of Nylanderia (Hymenoptera: Formicidae: Formicinae) from Hong Kong and Macao SARs, with an illustrated identification key for species in Southeast China and Taiwan.

Species of the ant genus Nylanderia constitute some of the most common ground dwelling Formicinae in tropical and subtropical areas. The genus includes numerous species introduced into new regions, especially within urban or disturbed environments. Here, we review the Nylanderia species found within Hong Kong and Macao, which are both highly urbanized regions and of critical importance to Southern China's policy-makers and non-governmental actors concerned with the regional spread of non-native species.

Interfacial ferroelectricity in marginally twisted 2D semiconductors.

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarization arranged into a twist-controlled network.

Moiré Superlattice Effects and Band Structure Evolution in Near-30-Degree Twisted Bilayer Graphene.

In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at and across 3 eV from the Dirac points.

Strongly Absorbing Nanoscale Infrared Domains within Strained Bubbles at hBN-Graphene Interfaces.

Graphene has great potential for use in infrared (IR) nanodevices. At these length scales, nanoscale features, and their interaction with light, can be expected to play a significant role in device performance. Bubbles in van der Waals heterostructures are one such feature, which have recently attracted considerable attention, thanks to their ability to modify the optoelectronic properties of two-dimensional (2D) materials through strain.

Atomic Resolution Imaging of CrBr Using Adhesion-Enhanced Grids.

Suspended specimens of 2D crystals and their heterostructures are required for a range of studies including transmission electron microscopy (TEM), optical transmission experiments, and nanomechanical testing. However, investigating the properties of laterally small 2D crystal specimens, including twisted bilayers and air-sensitive materials, has been held back by the difficulty of fabricating the necessary clean suspended samples. Here we present a scalable solution that allows clean free-standing specimens to be realized with 100% yield by dry-stamping atomically thin 2D stacks onto a specially developed adhesion-enhanced support grid.

Enhanced Superconductivity in Few-Layer TaS due to Healing by Oxygenation.

When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional (2D) materials. While defects are generally thought to negatively affect superconductivity in 2D materials, here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS). Our first-principles calculations show that incorporation of oxygen into the TaS crystal lattice is energetically favorable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the electronic band structure and the carrier density to the intrinsic characteristics of TaS.

Ultra-thin van der Waals crystals as semiconductor quantum wells.

Control over the quantization of electrons in quantum wells is at the heart of the functioning of modern advanced electronics; high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. However, this avenue has not been explored in the case of 2D materials. Here we apply this concept to van der Waals heterostructures using the thickness of exfoliated crystals to control the quantum well dimensions in few-layer semiconductor InSe.

Author Correction: Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures.

An Amendment to this paper has been published and can be accessed via a link at the top of the paper.

Formation and Healing of Defects in Atomically Thin GaSe and InSe.

Two dimensional III-VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point and extended atomic defects formed in mono-, bi-, and few-layer GaSe and InSe crystals is presented. Using state-of-the-art scanning transmission electron microscopy, it is observed that these materials can form both metal and selenium vacancies under the action of the electron beam.

Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures.

Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moiré superlattice. In graphene/hexagonal boron nitride structures, the presence of a moiré superlattice can lead to the observation of electronic minibands, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor-insulator transition at magic twist angles.

Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy.

Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductors that feature a strong variation of their band gap as a function of the number of layers in the crystal and, specifically for InSe, an expected crossover from a direct gap in the bulk to a weakly indirect band gap in monolayers and bilayers. Here, we apply angle-resolved photoemission spectroscopy with submicrometer spatial resolution (μARPES) to visualize the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for one-layer and two-layer InSe the valence band maxima are away from the Γ-point, forming an indirect gap, with the conduction band edge known to be at the Γ-point.

Scalable Patterning of Encapsulated Black Phosphorus.

Atomically thin black phosphorus (BP) has attracted considerable interest due to its unique properties, such as an infrared band gap that depends on the number of layers and excellent electronic transport characteristics. This material is known to be sensitive to light and oxygen and degrades in air unless protected with an encapsulation barrier, limiting its exploitation in electrical devices. We present a new scalable technique for nanopatterning few layered BP by direct electron beam exposure of encapsulated crystals, achieving a spatial resolution down to 6 nm.

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures.

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating.

Nanometer Resolution Elemental Mapping in Graphene-Based TEM Liquid Cells.

We demonstrate a new design of graphene liquid cell consisting of a thin lithographically patterned hexagonal boron nitride crystal encapsulated on both sides with graphene windows. The ultrathin window liquid cells produced have precisely controlled volumes and thicknesses and are robust to repeated vacuum cycling. This technology enables exciting new opportunities for liquid cell studies, providing a reliable platform for high resolution transmission electron microscope imaging and spectral mapping.

Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging.

Designing mechanomutable composites: reconfiguring the structure of nanoparticle networks through mechanical deformation.

Via a new dynamic, three-dimensional computer model, we simulate the tensile deformation of polymer-grafted nanoparticles that are cross-linked by labile bonds, which can readily rupture and reform. For a range of relatively high strains, the network does not fail, but rather restructures into a stable, ordered structure. Within this network, the reshuffling of the labile bonds enables the formation of this new morphology.

Modeling polymer grafted nanoparticle networks reinforced by high-strength chains.

Using a multi-scale computational approach, we determine the effect of introducing a small fraction of high-strength connections between cross-linked nanoparticles. The nanoparticles' rigid cores are decorated with a corona of grafted polymers, which contain reactive functional groups at the chain ends. With the overlap of neighboring coronas, these reactive groups can form weak labile bonds, which can reform after breakage, or stronger bonds, which rupture irreversibly and thus, the nanoparticles are interconnected by dual cross-links.