Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene-boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques.
View Article and Find Full Text PDFIn this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution, and the etch product desorption kinetics have on the resultant nanoscale etching profile. Unlike analogous electron beam induced deposition models, it is shown that one must consider the diffusion, desorption, and possible re-dissociation of the resultant etch product to understand the observed etching profiles.
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