High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus.

We present a new method to synthesize bulk indium nitride by means of a simple solid-state chemical reaction carried out under hydrostatic high-pressure/high-temperature conditions in a multi-anvil apparatus, not involving gases or solvents during the process. The reaction occurs between the binary oxide InO and the highly reactive LiN as the nitrogen source, in the powder form. The formation of the hexagonal phase of InN, occurring at 350 °C and ≥ 3 GPa, was successfully confirmed by powder X-ray diffraction, with the presence of LiO as a unique byproduct.

Secondary electron emission contrast of quantum wells in GaAs p-i-n junctions.

The secondary electron (SE) signal over a cleaved surface of GaAs p-i-n solar cells containing stacks of quantum wells (QWs) is analyzed by high-resolution scanning electron microscopy. The InGaAs QWs appear darker than the GaAsP barriers, which is attributed to the differences in electron affinity. This method is shown to be a powerful tool for profiling the conduction band minimum across junctions and interfaces with nanometer resolution.