Acoustoelectric Effect due to an In-Depth Inhomogeneous Conductivity Change in ZnO/Fused Silica Substrates.

The acoustoelectric (AE) effect induced by the absorption of ultraviolet (UV) light at 365 nm in piezoelectric ZnO films was theoretically and experimentally studied. c-ZnO films 4.0 µm thick were grown by the RF reactive magnetron sputtering technique onto fused silica substrates at 200 °C.

Experimental and Theoretical Analysis of Rayleigh and Leaky-Sezawa Waves Propagating in ZnO/Fused Silica Substrates.

Piezoelectric c-axis oriented zinc oxide (ZnO) thin films, from 1.8 up to 6.6 µm thick, have been grown by the radio frequency magnetron sputtering technique onto fused silica substrates.

SAW Humidity Sensing with rr-P3HT Polymer Films.

In the present paper the humidity sensing properties of regioregular rr-P3HT (poly-3-hexylthiophene) polymer films is investigated by means of surface acoustic wave (SAW) based sensors implemented on LiNbO (128 Y-X) and ST-quartz piezoelectric substrates. The polymeric layers were deposited along the SAW propagation path by spray coating method and the layers thickness was measured by atomic force microscopy (AFM) technique. The response of the SAW devices to relative humidity (rh) changes in the range ~5-60% has been investigated by measuring the SAW phase and frequency changes induced by the (rh) absorption in the rr-P3HT layer.

UV Sensor Based on Surface Acoustic Waves in ZnO/Fused Silica.

Zinc oxide (ZnO) thin films have been grown by radio frequency sputtering technique on fused silica substrates. Optical and morphological characteristics of as-grown ZnO samples were measured by various techniques; an X-ray diffraction spectrum showed that the films exhibited hexagonal wurtzite structure and were c-axis-oriented normal to the substrate surface. Scanning electron microscopy images showed the dense columnar structure of the ZnO layers, and light absorption measurements allowed us to estimate the penetration depth of the optical radiation in the 200 to 480 nm wavelength range and the ZnO band-gap.

Extremely High Frequency Electromagnetic Fields Facilitate Electrical Signal Propagation by Increasing Transmembrane Potassium Efflux in an Artificial Axon Model.

Among the many biological effects caused by low intensity extremely high frequency electromagnetic fields (EHF-EMF) reported in the literature, those on the nervous system are a promising area for further research. The mechanisms by which these fields alter neural activity are still unclear and thus far there appears to be no frequency dependence regarding neuronal responses. Therefore, proper in vitro models for preliminary screening studies of the interaction between neural cells with EMF are needed.

Impact of thickness variation on structural, dielectric and piezoelectric properties of (Ba,Ca)(Ti,Zr)O epitaxial thin films.

It is shown that the dielectric and piezoelectric properties of Ba(TiZr)O-x(BaCa)TiO (x = 0.45) (BCTZ 45) epitaxial thin films have a nontrivial dependence on film thickness. BCTZ 45 epitaxial films with different thicknesses (up to 400 nm) have been deposited on SrTiO by pulsed laser deposition and investigated by different combined techniques: conventional and off-axis X-ray diffraction, high resolution transmission electron microscopy and dielectric and piezoforce microscopy.

High plasticity reversible resistive switching in heteroepitaxial metal/CeO2-x /Nb:SrTiO3/Ti/Pt structures.

We report on the characterization of resistive switching devices based on epitaxial CeO2 thin films as a functional material. CeO2 epitaxial thin films were grown by the pulsed laser deposition technique on conductive substrates. Platinum and titanium nitride top electrodes (TE) were successively deposited.

Guided lamb wave electroacoustic devices on micromachined AlN/Al plates.

An electroacoustic micro-device based on the propagation of guided acoustic Lamb waves in AlN/Al plate is described. The AlN thin film is deposited by sputtering technique, optimized to achieve a high degree of orientation (rocking curve full-width at half-maximum /sp lap/ 3.5 degrees ) of the c-axis perpendicular to the plate surface.

Growth of A1N piezoelectric film on diamond for high-frequency surface acoustic wave devices.

Diamond films are very desirable for application to SAW devices because of their high acoustic wave velocity, which allows the extending of the frequency limit of operation at a given interdigital transducer line-width resolution. Use of high-quality AIN as the piezoelectric layer in conjunction with diamond is also desirable because of its high SAW velocity--the highest among all piezoelectric materials--together with its excellent electrical, mechanical, and chemical properties. The problems arising in the growth of A1N films on diamond have prevented, until now, the use of this combination of materials.