Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO single crystals.

The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped TiO to 10. However, the follow-up studies suggest an extrinsic contribution to the colossal permittivity from thermally excited carriers.