Decoding the magnetic bit positioning error in a ferrimagnetic racetrack.

Current-driven motion of magnetic domain walls is one of the key technologies for developing storage class memory devices. Extensive studies have revealed a variety of material systems that exhibit high-speed and/or lower power propagation of the domain walls driven by electric current. However, few studies have assessed the reliability of the operations of the memory technology.

Magnon-Phonon Coupling of Synthetic Antiferromagnets in a Surface Acoustic Wave Cavity Resonator.

We used a surface acoustic wave (SAW) cavity resonator to study the coupling of acoustic magnons in a synthetic antiferromagnet (SAF) and phonons carried by SAWs. The SAF is composed of a CoFeB/Ru/CoFeB trilayer, and the scattering matrix of the SAW resonator is studied to assess the coupling. We find that the spectral line width of the SAW resonator is modulated when the frequency of the excited magnons approaches the SAW resonance frequency.

Spin-orbit torque driven magnetization switching in W/CoFeB/MgO-based type-Y three terminal magnetic tunnel junctions.

We have studied current induced magnetization switching in W/CoFeB/MgO based three terminal magnetic tunnel junctions. The switching driven by spin-orbit torque (SOT) is evaluated in the so-called type-Y structure, in which the magnetic easy-axis of the CoFeB layer lies in the film plane and is orthogonal to the current flow. The effective spin Hall angle estimated from the bias field dependence of critical current (I) is ~ 0.

Switchable generation of azimuthally- and radially-polarized terahertz beams from a spintronic terahertz emitter.

We propose and demonstrate a method of generating two fundamental terahertz cylindrical vector beams (THz-CVBs), namely the azimuthally- and radially-polarized THz pulses, from a spintronic THz emitter. We begin by presenting that the spintronic emitter generates the HE mode, a quadrupole like polarization distribution, when placed between two magnets with opposing polarity. By providing an appropriate mode conversion using a triangular Si prism, we show both from experiment and numerical calculation that we obtain azimuthal and radial THz vector beams.

Acoustic spin Hall effect in strong spin-orbit metals.

We report on the observation of the acoustic spin Hall effect that facilitates lattice motion-induced spin current via spin-orbit interaction (SOI). Under excitation of surface acoustic wave (SAW), we find that a spin current flows orthogonal to the SAW propagation in nonmagnetic metals (NMs). The acoustic spin Hall effect manifests itself in a field-dependent acoustic voltage in NM/ferromagnetic metal bilayers.

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons.

We have studied the charge to spin conversion in Bi Sb /CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter-deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi Sb . The SHC increases with increasing Bi Sb thickness before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present, play little role.

Current-Induced Modulation of the Interfacial Dzyaloshinskii-Moriya Interaction.

The Dzyaloshinskii-Moriya (DM) interaction is an antisymmetric exchange interaction that is responsible for the emergence of chiral magnetism. The origin of the DM interaction, however, remains to be identified albeit the large number of studies reported on related effects. It has been recently suggested that the DM interaction is equivalent to an equilibrium spin current density originating from spin-orbit coupling, an effect referred to as the spin Doppler effect.

Interference induced enhancement of magneto-optical Kerr effect in ultrathin magnetic films.

We have studied the magneto-optical spectra of ultrathin magnetic films deposited on Si substrates coated with an oxide layer (SiOx). We find that the Kerr rotation angle and the ellipticity of ~1 nm thick CoFeB thin films, almost transparent to visible light, show a strong dependence on the thickness of the SiOx layer. The Kerr signal from the 1 nm CoFeB thin film can be larger than that of ~100 nm thick CoFeB films for a given SiOx thickness and light wavelength.

The spin Nernst effect in tungsten.

The spin Hall effect allows the generation of spin current when charge current is passed along materials with large spin-orbit coupling. It has been recently predicted that heat current in a nonmagnetic metal can be converted into spin current via a process referred to as the spin Nernst effect. We report the observation of the spin Nernst effect in W.

Current-Induced Generation and Synchronous Motion of Highly Packed Coupled Chiral Domain Walls.

Chiral domain walls of Neel type emerge in heterostructures that include heavy metal (HM) and ferromagnetic metal (FM) layers owing to the Dzyaloshinskii-Moriya (DM) interaction at the HM/FM interface. In developing storage class memories based on the current induced motion of chiral domain walls, it remains to be seen how dense such domain walls can be packed together. Here we show that a universal short-range repulsion that scales with the strength of the DM interaction exists among chiral domain walls.

Tunable inertia of chiral magnetic domain walls.

The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall is a topological object that has been observed to follow this behaviour.

Giant nonreciprocal emission of spin waves in Ta/Py bilayers.

Spin waves are propagating disturbances in the magnetization of magnetic materials. One of their interesting properties is nonreciprocity, exhibiting that their amplitude depends on the magnetization direction. Nonreciprocity in spin waves is of great interest in both fundamental science and applications because it offers an extra knob to control the flow of waves for the technological fields of logics and switch applications.

Spin Hall Magnetoresistance in Metallic Bilayers.

Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of a heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find a nearly tenfold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity.

Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy.

We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.

Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers.

Recent advances in the understanding of spin orbital effects in ultrathin magnetic heterostructures have opened new paradigms to control magnetic moments electrically. The Dzyaloshinskii-Moriya interaction (DMI) is said to play a key role in forming a Néel-type domain wall that can be driven by the spin Hall torque. Here we show that the strength and sign of the DMI can be changed by modifying the adjacent heavy-metal underlayer (X) in perpendicularly magnetized X/CoFeB/MgO heterostructures.

Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO.

Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, a quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking.

Topological repulsion between domain walls in magnetic nanowires leading to the formation of bound states.

Head-to-head and tail-to-tail magnetic domain walls in nanowires behave as free magnetic monopoles carrying a single magnetic charge. Since adjacent walls always carry opposite charges, they attract one another. In most cases this long-range attractive interaction leads to annihilation of the two domain walls.

Domain wall dynamics driven by spin transfer torque and the spin-orbit field.

We have studied current-driven dynamics of domain walls when an in-plane magnetic field is present in perpendicularly magnetized nanowires using an analytical model and micromagnetic simulations. We model an experimentally studied system, ultrathin magnetic nanowires with perpendicular anisotropy, where an effective in-plane magnetic field is developed when current is passed along the nanowire due to the Rashba-like spin-orbit coupling. Using a one-dimensional model of a domain wall together with micromagnetic simulations, we show that the existence of such in-plane magnetic fields can either lower or raise the threshold current needed to cause domain wall motion.

Enhanced stochasticity of domain wall motion in magnetic racetracks due to dynamic pinning.

Understanding the details of domain wall (DW) motion along magnetic racetracks has drawn considerable interest in the past few years for their applications in non-volatile memory devices. The propagation of the DW is dictated by the interplay between its driving force, either field or current, and the complex energy landscape of the racetrack. In this study, we use spin-valve nanowires to study field-driven DW motion in real time.

Magnetic domain-wall racetrack memory.

Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire.

Resonant amplification of magnetic domain-wall motion by a train of current pulses.

The current-induced motion of magnetic domain walls confined to nanostructures is of interest for applications in magnetoelectronic devices in which the domain wall serves as the logic gate or memory element. The injection of spin-polarized current below a threshold value through a domain wall confined to a pinning potential results in its precessional motion within the potential well. We show that by using a short train of current pulses, whose length and spacing are tuned to this precession frequency, the domain wall's oscillations can be resonantly amplified.

Dependence of current and field driven depinning of domain walls on their structure and chirality in permalloy nanowires.

A magnetic domain wall (DW) injected and pinned at a notch in a permalloy nanowire is shown to exhibit four well-defined magnetic states, vortex and transverse, each with two chiralities. These states, imaged using magnetic force microscopy, are readily detected from their different resistance values arising from the anisotropic magnetoresistance effect. Whereas distinct depinning fields and critical depinning currents in the presence of magnetic fields are found, the critical depinning currents are surprisingly similar for all four DW states in low magnetic fields.